Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SK65-G |
PANASONIC|Panasonic |
N/a |
3200 |
|
|
2SK660 ,N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECMFEATURES• Compact package• High forward transfer admittance| yfs | = 1200 µ S TYP. (VDS = 5 V, ID = ..
2SK662 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit*Drain to Source ..
2SK663 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit*Drain to Source ..
2SK664 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK665 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
3KBP04M ,Diodes Document Number 888882 03-Dec-04Average Forward Current (A)Peak Forward Surge Current (A)3KBP005M ..
3LN01C ,N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CPAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01C-TB-H , General-Purpose Switching Device Applications