2SK4124 ,N-Channel Power MOSFET, 500V, 20A, 430mOhm, TO-3P-3LMaximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 500 VDSSGate-to-So ..
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2SK4124
N-Channel Power MOSFET, 500V, 20A, 430mOhm, TO-3P-3L
Features• Low ON-resistance, low input capacitance, ultrahigh-speed switching• Adoption of high reliability HVP process• Avalanche resistance guarantee
Specifi cations
Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 500 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID 20 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A
Allowable Power Dissipation PD 2.5 W
Tc=25°C (SANYO’s ideal heat dissipation condition)*1 170 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 110 mJ
Avalanche Current *2 IAV 20 A
*1 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=50V, L=500μH, IAV=20A (Fig.1)
*3 L≤500μH, single pulse
Package Dimensionsunit : mm (typ)
2SK4124
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Product & Package Information• Package : TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking Electrical Connection
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3P-3L
5.45 5.45
3.2 7.0
2SK4124-1E
