2SK4065 ,N-Channel Power MOSFET, 75V, 100A, 6mOhm, TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 75 VDSS ..
2SK4066 ,N-Channel Power MOSFET, 60V, 100A, 4.7mOhm, TO-262-3L/TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 60 VDSS ..
2SK4070 , MOS FIELD EFFECT TRANSISTOR
2SK4070-S15-AY , MOS FIELD EFFECT TRANSISTOR
2SK4078-ZK-E1-AY , SWITCHING N-CHANNEL POWER MOS FET
2SK408 , SILICON N CHANNEL MOS FET
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13002 , TO-251 Plastic-Encapsulate Transistors
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
3DD13007 , High Speed Switching Suitable for Switching Regulator and Motor Control
2SK4065
N-Channel Power MOSFET, 75V, 100A, 6mOhm, TO-263-2L
Features• ON-resistance RDS(on)1=4.6mΩ (typ.) • Input capacitance Ciss=12200pF (typ.) • 4V drive
Specifi cations
Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 75 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 100 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 400 A
Allowable Power Dissipation PD 1.65 W
Tc=25°C 90 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 735 mJ
Avalanche Current *2 IAV 70 A
Note : *1 VDD=30V, L=200μH, IAV=70A (Fig.1) *2 L≤200μH, single pulse
Package Dimensionsunit : mm (typ)
2SK4065
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications2, 4
1 : Gate
2 : Drain
3 : Source4 : Drain
SANYO : TO-263-2L
2.54 2.54
0 to 0.25
4.5 8.0
Product & Package Information
• Package : TO-263-2L
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 800 pcs./reel
Packing Type: DL Marking
Electrical Connection2SK4065-DL-1E
