Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SK366-BL |
TOSHIBA|TOSHIBA |
N/a |
24940 |
|
|
2SK3670 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 150 ..
2SK3670 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitGate l ..
2SK3673-01MR , N-CHANNEL SILICON POWER MOSFET
2SK3674-01S , Power MOSFET SuperFAP-G series Target Specification
2SK3679 ,Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY2SK3679-01MR (900V/1.58Ω /9A)1) Package TO-220F2) Absolute Maximum Ratings (Tc=25 unle ..
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..