| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SK3615-TL-E |
SANYO|SANYO |
N/a |
700 |
 |
|
2SK3617 ,Medium Output MOSFETsOrdering number : ENN8112 2SK3617N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3617App ..
2SK3628 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitGate-drain s ..
2SK363 ,N-Channel silicon junction field-effect transistorApplications High breakdown voltage: V = −40 V GDS High input impedance: I = −1.0 nA (max) ..
2SK3635-Z ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(o ..
2SK3636 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitDrain-source ..
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
