Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SK3576-T1B-A |
NEC|NEC |
N/a |
60000 |
|
|
2SK3577 ,N Channel enhancement MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3577-T1B ,N Channel enhancement MOS FETFEATURES1 2• 2.5 V drive available• Low on-state resistanceRDS(on)1 = 63 mΩ MAX. (VGS = 4.5 V, ID = ..
2SK3577-T1B ,N Channel enhancement MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTOR 2SK3577 N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHING ..
2SK3580-01MR ,N-CHANNEL SILICON POWER MOSFETApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings a ..
2SK3588-01L ,N-CHANNEL SILICON POWER MOSFETApplicationsSwitching regulators P4UPS (Uninterruptible Power Supply)DC-DC convertersMaximum rating ..
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..