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Partno	Mfg	Dc	Qty	Available	Descript
2SK3078	TOSHIBA	N/a	10000	avai	FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

2SK3078 ,FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)APPLICATIONS (GSM) Unit: mm
Output Power : P = 27.0 dBmW (Min.) O
Gain : G = 12.5 dB (Min.) P
..
2SK3078A ,Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier ApplicationsApplications Unit: mm
 Output power: P ≥ 28.0dBmW o
 Gain: G ≥ 8.0dB p
 Drain Efficiency: ηD ..
2SK3079A ,Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier ApplicationsApplications Unit: mm
 Output power: P = 33.50dBmW (2.2 W) (min) o
 Gain: G = 13.50dB (min) ..
2SK3080 , Silicon N Channel MOS FET High Speed Power Switching
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2SK3081 , Silicon N Channel MOS FET High Speed Power Switching
3845 , AM NOISE BLANKER
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3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS
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3845B , HIGH-PERFORMANCE CURRENT-MODE PWM CONTROLLERS

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2SK3078
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3078
900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Output Power : PO = 27.0 dBmW (Min.) Gain : GP = 12.5 dB (Min.) Drain Efficiency : ηD = 46% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
Unit: mm

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