| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SK2920(TE16L1N) |
TOSHIBA|TOSHIBA |
N/a |
242 |
 |
|
2SK2924 ,Silicon N-Channel Power F-MOS FETElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK2924 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C1 237 Parameter Symbol Ratings Unit1: GateDrain to Source break ..
2SK2925 , Silicon N Channel MOS FET High Speed Power Switching
2SK2925S , Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source
2SK2925S , Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source
37LV36 , 36K, 64K, and 128K Serial EPROM Family
37LV36 , 36K, 64K, and 128K Serial EPROM Family
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
