2SK2376 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.25 ..
2SK2376 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 13 mΩ (typ.) DS (ON)High ..
2SK2381 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 0.56 Ω (typ.) DS (ON)High forward transfer ..
2SK2382 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 0.13 Ω (typ.) DS (ON)High forward transfer ..
2SK2382 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK2385 ,N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)APPLICATIONSUnit in mmCHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE
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2SK2376
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK2376 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 471 µH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.5 g (typ.)
Weight: 1.5 g (typ.)
