2SK210 ,Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier ApplicationsApplications High power gain: G = 24dB (typ.) (f = 100 MHz) PS Low noise figure: NF = 1.8dB ..
2SK2101-01MR ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2103 T100 , Small switching (30V, 2A)
2SK2103T100 , Small switching (30V, 2A)
2SK2109 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2109N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2S ..
2SK210-BL , FM Tuner Applications VHF Band Amplifier Applications
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
2SK210
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK210 FM Tuner Applications
VHF Band Amplifier Applications High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) NF VDD � 10 V, f � 100 MHz (Figure 1)
Note: IDSS classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA
Unit: mm
Weight: 0.012 g (typ.)
