| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SK1772HYTR |
RENESAS |
N/a |
9000 |
 |
|
| 2SK1772HYTR |
HITACHI |
N/a |
406 |
|
|
2SK1792 ,Discrete SemiconductorsThermal CharacteristicsCHARACTERISTIG SYMBOL I MAX. UNITThermal Resistance, Channel lo Case B(clw.) ..
2SK1792 ,Discrete SemiconductorsAbsolute Maximum Ratings (Ta = MC) 3. SOURCECHARACTERISTICDrain-Source VoltageDrain-Gate Voltage (h ..
2SK1792 ,Discrete SemiconductorsFeaturesq 4-Volt Gate Drive. Low Drain-Source ON Resistance- RDS(ON) = 15mg fryp.)- High Forward Tr ..
2SK1796 ,MOS Field Effect Power TransistorFEATURES
0 Low On-state Resistance
RDS(on) E 1.2 Q (VGS = 10 V, ID = 5 A)
0 Low Ciss Ciss = 2 ..
2SK1796 ,MOS Field Effect Power Transistorapplications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Drain to Source Voltage Voss 900 V l. Gat ..
34691-0200 , Stac64™ 2.54mm (.100”) Single, Multi-Pockect and Hybrid Header System
3500C , FEMALE THREADED STANDOFFS
35021-1201 , Board-In Right Angle Crimp Terminal
