2SK170 ,Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier ApplicationsApplications Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. High |Y ..
2SK170-BL , Low Noise Audio Amplifier Applications
2SK170-BL , Low Noise Audio Amplifier Applications
2SK170-GR , Low Noise Audio Amplifier Applications
2SK170-GR , Low Noise Audio Amplifier Applications
2SK1724 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at. Ta = 25°C unitDrain to Source Voltage Voss 30 VGate to Source Voltage ..
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3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
2SK170
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170 Low Noise Audio Amplifier Applications Recommended for first stages of EQ and M.C. head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = −40 V Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
NF (1) VDS � 10 V, ID � 1.0 mA, RG � 1 k�,
f � 1 kHz
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Unit: mm
Weight: 0.21 g (typ.)
