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2SK1381TOSHIBAN/a143avaiTOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


2SK1381 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 25 mΩ (typ.) DS (ON)High ..
2SK1382 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 15 mΩ (typ.) DS (ON)High ..
2SK1382 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Weight: 9.75 g (typ.) Characteristics Symbol Max Unit Thermal resistance, ..
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34071 , SPLICE, BUTT, PLASTI-GRIP WIRE SIZE 16-14 AWG


2SK1381
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSIII)
2SK1381

Relay Drive, Motor Drive and DC−DC Converter Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)

Thermal Characteristics
Rth (ch−a) 50
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 4.6 g (typ.)
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