| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SK1062（TE85F） |
TOSHIBA|TOSHIBA |
N/a |
436 |
 |
|
2SK1065 ,High-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitGate to Drain Voltage VGDO - 20 VGate Current lo 10 mADra ..
2SK1066 ,High-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25"C unitDrain to Source Voltage VDSX 15 VGate to Drain Voltage VG ..
2SK1068 ,Impedance Conversion ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain to Source Voltage Fhsi 40 VGate to Drain Voltage VG ..
2SK1069 ,N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN2749N-Channel Junction Silicon FET2SK1069Low-FrequencyGeneral-Purpose Amplifier A ..
2SK1070PICTL-E , Silicon N-Channel Junction FET
3364W-1-103E , 4 mm Square Trimming Potentiometer
3364W-1-103E , 4 mm Square Trimming Potentiometer
33661 ,LIN Enhanced Physical Interfacefeatures of CAN are not required. The 33661 is a Physical Layer component dedicated to automotive L ..
