Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SJ645-E |
SANYO|SANYO |
N/a |
4000 |
|
|
2SJ647 ,P-Channel enhancement MOS FET for load swFEATURES• 2.5 V drive available31• Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ..
2SJ648 ,P-Channel enhancement MOS FET for load swFEATURES 2 1• 2.5 V drive available • Low on-state resistance +0.10.2–0 RDS(on)1 = 1.45 Ω MAX. ( ..
2SJ649 , MOS FIELD EFFECT TRANSISTOR
2SJ650 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ651 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
33468-0001 , 2.54mm (.100") Pitch MX64™ Terminal, Tin (Sn) Plating, 22 AWG, Right Reel PayoffAlso used with MX123™ Female Receptacle Housing
3350 , FLAT WASHERS – NYLON & FIBRE
3359P-1-103 , 3/8" ROUND/SINGLE-TURN/CERMENT INDUSTRIAL/OPEN FRAME