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2SJ620TOSHIBAN/a40avaiField Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications


2SJ620 ,Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SJ621 ,Pch enhancement type MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTOR 2SJ621P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGD ..
2SJ621 ,Pch enhancement type MOS FETFEATURES1• 1.8 V drive available 2• Low on-state resistanceRDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID ..
2SJ621-T1B ,Pch enhancement type MOS FETfeatures a low on-state resistance and excellentswitching characteristics, and is suitable for
2SJ624 ,Pch enhancement type MOS FETFEATURES12• 1.8 V drive available• Low on-state resistance0.65RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ..
2SJ624-T1B ,Pch enhancement type MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
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3350 , FLAT WASHERS – NYLON & FIBRE
3359P-1-103 , 3/8" ROUND/SINGLE-TURN/CERMENT INDUSTRIAL/OPEN FRAME
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2SJ620
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 -π-MOSV)
2SJ620

Switching Regulator and DC-DC Converter Applications
Motor Drive Applications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V , ID = −1 mA)
Maximum Ratings (Ta �
�� � 25°C)
Thermal Characteristics

Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD � �50 V, Tch � 25°C (initial), L � 3.56 mH, RG � 25 �,
IAR � �18 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.74 g (typ.)
Circuit Configuration

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