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2SJ465TOSHIBAN/a4500avaiDC .DC Converter, Relay Drive and Motor Drive Applications


2SJ465 ,DC .DC Converter, Relay Drive and Motor Drive Applications
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2SJ465
DC .DC Converter, Relay Drive and Motor Drive Applications
2SJ465 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSV)
2SJ465

DC−DC Converter, Relay Drive and Motor Drive Applications 2.5 V gate drive Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = −100 µA (max)
(VDS = −16 V) Enhancement−mode : Vth = −0.5~−1.1 V
(VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Tstg
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Thermal Characteristics
Rth (ch−a) 250
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.05 g (typ.)
(The two digits represent
the part number.)
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