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2SJ438TOSHIBAN/a27avaiTOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ438TOSN/a37avaiTOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


2SJ438 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ438 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SJ438
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSV)
2SJ438

DC−DC Converter, Relay Drive and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)

Thermal Characteristics
Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
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