2SJ324-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ325 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS fr, 'xi its TI l
TEST CONDITIONS .
VGS = ~10 V, ID = -2.0 A
Ws = -4 ..
2SJ325-Z-E1 ,P-channel enhancement typeFEATURES
C....; q Low On-state Resistance
RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A)
RD ..
2SJ325-Z-E2 ,P-channel enhancement typeFEATURES
C....; q Low On-state Resistance
RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A)
RD ..
2SJ325-Z-T2 ,P-channel enhancement typeapplications.
ABSOLUTE MAXIMUM RATINGS (Ta IL".' 25 °C)
Drain to Source Voltage Voss V -30 V
..
2SJ326 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C). "
CHARACTERISTIC
Drain to Source On-state Resistance ..
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
2SJ324-Z-E1
