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2SJ316SANYON/a3700avaiVery High-Speed Switching Applications


2SJ316 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°CDrain to Source VoltageGate to Source VoltageDrain Current(DC) ..
2SJ317NYTL-E , Silicon P Channel MOS FET
2SJ324 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C) PA Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ324-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C) PA Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ325 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS fr, 'xi its TI l TEST CONDITIONS . VGS = ~10 V, ID = -2.0 A Ws = -4 ..
2SJ325-Z-E1 ,P-channel enhancement typeFEATURES C....; q Low On-state Resistance RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A) RD ..
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer


2SJ316

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