2SJ200 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ200 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ201 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ201 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ202 ,P-CHANNEL MOS FET FOR SWITCHINGVrrc'rr.iFmw'erPttm'it'NtMsrteir'-'it"er__Pkr _ M A»; --..
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2SJ202-T1 ,MOS field effect transistorVrrc'rr.iFmw'erPttm'it'NtMsrteir'-'it"er__Pkr _ M A»; --..
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3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
2SJ200
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200 High Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 4.0 S (typ.) Complementary to 2SK1529
Maximum Ratings (Ta = 25°C)
Marking
Electrical Characteristics (Ta = 25°C) ―
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification O: −0.8~−1.6, Y: −1.4~−2.8
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 4.6 g (typ.)
