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2SJ176-E3 from IC-PHOENIX Fast Delivery,Good Price
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2SJ176-E3 VIS N/a 1000



2SJ178 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES . Low ON-state resistance RDSM = 1.5 n MAX. at VGS = --4 v, ID 'LT: -0.5 A RDSM = 1 ..
2SJ179 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES q Directly driven by le having a 5 V power supply. 0 Has low on-state resistance RDS( ..
2SJ185 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGapplications. 1.1 to 1.4 1. Source 2. Gate 3. Drain MARK :H12 Source(S) (Diode in ..
2SJ187 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°C unitDrain to Source Voltage Vnss - 30 VGate to Source Voltage K ..
2SJ188 ,Very High-Speed Switching ApplicationsFeatures. Low ON resistance. Very high-speed switching. Low-voltage driveDrain to Source VoltageGat ..
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
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