| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SJ132-Z-T2 |
NEC|NEC |
N/a |
1500 |
 |
|
2SJ133 ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = –4 V) High curr ..
2SJ133. ,MOS electric field effect power transistorFEATURES PACKAGE DRAWING (UNIT: mm)• Gate drive available at logic level (VGS = –4 V) High curr ..
2SJ133-Z ,MOS electric field effect power transistorDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ133, 2SJ133-ZP-CHANNEL POWER MOS FETFOR SWIT ..
2SJ134 ,MOS FIELD EFFECT TRANSISTORN E c ELECTRONICS INC =13 DE'
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ELECTRON DEVICE
UN
FAS
P-CHANNEL
PACKAGE DI ..
2SJ135 ,FAST SWITCHING P-CHANNEL SILICON POWER MOS FETN E C ELECTRONICS INC
NEC
ELECTRON DEVICE
=12. DEIQHEHES nnmuua l Ill"--,
PRELIMINARY SF' ..
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
