2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ106 ,Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ108 ,Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SJ108 ,Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SJ109 ,P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
2SJ109 ,P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
32F8030-CN , Programmable Electronic Filter
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
2SJ106
Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ106 Audio Frequency Amplifier Applications
Analog Switch Applications
Constant Current Applications
Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) Small package
Maximum Ratings (Ta ��� � 25°C) Tstg
Electrical Characteristics (Ta ��� � 25°C) Crss VDG � �10 V, ID � 0, f � 1 MHz
Note: IDSS classification Y: �1.2~�3.0 mA, GR (G): �2.6~�6.5 mA, BL (L): �6~�14 mA
Marking Unit: mm
Weight: 0.012 g (typ.)
