| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SD245 |
TOSHIBA|TOSHIBA |
N/a |
3096 |
 |
|
2SD2453 ,Power DeviceElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitCollector-emitter ..
2SD2454 , Silicon NPN Power Transistors
2SD2459 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD2461 ,Transistor Silicon NPN Triple Diffused Type Power Amplifier ApplicationsApplications Unit: mm High DC current gain: h = 800 to 3200 (V = 5 V, I = 0.1 A) FE (1) CE C ..
2SD2474 ,Silicon PNP epitaxial planer type(For low-frequency amplification)Absolute Maximum Ratings (Ta=25˚C)n 3.0– 0.15321Parameter Symbol Ratings UnitCollector to base vol ..
322CNQ030 ,30V 300A Schottky Discrete Diode in a TO-249AA Non-Isolated packageapplications are in switching power supplies, converters,waveformfree-wheeling diodes, and reverse ..
323-00 , INDUCTOR 4 mH POTS LOW PASS FILTER
32376 , TI/E1/CEPT/ISDN-PRI DUAL TRANSFORMER
