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2SD1950 from NEC, NEC 54000pcs , SOT-89,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
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2SD1950 NEC N/a 54000
ELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C) CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 TEST CONDICTIONS Collecfor Cutoff current _ . T ICBC _ _ ' 100 nA- vCB"= 3trv", IE = o Emitter 'Cuztoff Current _ IEBO 100 mA VEB = 10 v, IC = 0 DC Current Gain hFE1'"''' 800 _ 1500 " 3200 , VCE = 5 .0A/, ld = 1.0 A DC CurrentGain hFE2*** _ . 400 -' V . . " / _ _ VCE= Toy, IC= 2.0A Coiiectorsaturtition Volta’ée’ . VCE(sa pH [ _ 7- . 0.18 0.3g." f C v, - IC= 1 .0A, 13': 10 MA Base Saturation Voltage _ -. V VBE(sét )*** _ _ 0.83 1.2' . l VH1 T _ ._'C --10 A, IB 510 m_A Base to Emitter Voltage T -. v3.51” .600 I' .‘660 ' 700 _ mV, _ vis = 5.0 v, IC = 300 mA' Gain Bandwidtkriroduct ' _ Fr' -/ ' ' Iso' I - 350 j . It CMHzf‘V. I , s/cis L 10 v, IE = -500 mA Output Capacitance _ . 7 _ - '. - vCB ---." 1dy,hr- 0,1 = 1.0 MHz 't''''Pulsed: PW s 350 us, Duty trvGe s 2 % hFE Classification . MARKING, VM . ,_ . -, I-',),: _ '_ VK . _.- 'r,-,'- l C,', _ .' hFE - '800 to 1600-7 1?oo to 2400 l 2000 to 3200 Document N0. TC-r-li/i (O.D.N0. Ttr-tSIM/i) Date Published November 1994 M _ . - V © NEC Corporation 1987 Printed in Japan _------------NEC V I ' _ 2301950
2SD1949 T106R ROHM 3000
2SD1949-R ROHM 9000
2SD1949T106Q ROHM 3000
2SD1949T106R ROHM 1700
2SD1950 NEC 54000,ELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C) CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 TEST CONDICTIONS Collecfor Cutoff current _ . T I ..
2SD1950-T1 HITACHI 185,ELECTRICAL CHARACTERISTICS (Ta IA".' 25 °C) CHARACTERISTIC _ SYMBQL ”MIN. ' ' TYP. MAX. UNIT ‘2 TEST CONDICTIONS Collecfor Cutoff current _ . T I ..
2SD1950-T1 NEC 217612,FEATURES _ q High DC Current Gain and good hFE' linearity. hFE = 800 to 3 200 (@VCE = 5.0 V, IC = 1.0 A) I 0 Low Collector Saturation Voltage. _ ..
2SD1950-T1(VM) NEC 8000
2SD1950-T1-AZ NEC 10000



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