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2SD1941 from HI

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15.625ms

2SD1941

Manufacturer: HI

Silicon NPN Power Transistors

Partnumber Manufacturer Quantity Availability
2SD1941 HI 3008 In Stock

Description and Introduction

Silicon NPN Power Transistors The part 2SD1941 is a silicon NPN epitaxial planar transistor manufactured by Hitachi (HI). Here are the key specifications:

- **Type**: NPN
- **Material**: Silicon
- **Structure**: Epitaxial planar
- **Collector-Emitter Voltage (VCEO)**: 150V
- **Collector-Base Voltage (VCBO)**: 150V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 3A
- **Collector Dissipation (PC)**: 25W
- **Junction Temperature (Tj)**: 150°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **DC Current Gain (hFE)**: 60 to 320
- **Transition Frequency (fT)**: 20MHz
- **Package**: TO-220

These specifications are typical for the 2SD1941 transistor as provided by Hitachi.

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