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2SD1863 from ROHM

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2SD1863

Manufacturer: ROHM

Power Transistor (80V, 1A)

Partnumber Manufacturer Quantity Availability
2SD1863 ROHM 100 In Stock

Description and Introduction

Power Transistor (80V, 1A) The 2SD1863 is a silicon NPN epitaxial planar transistor manufactured by ROHM. Its key specifications include:

- **Collector-Emitter Voltage (VCEO):** 150V
- **Collector-Base Voltage (VCBO):** 150V
- **Emitter-Base Voltage (VEBO):** 5V
- **Collector Current (IC):** 1.5A
- **Collector Dissipation (PC):** 20W
- **Junction Temperature (Tj):** 150°C
- **DC Current Gain (hFE):** 60 to 320
- **Transition Frequency (fT):** 50MHz
- **Package:** TO-220F

These specifications are typical for the 2SD1863 transistor, which is commonly used in power amplification and switching applications.

Partnumber Manufacturer Quantity Availability
2SD1863 95 In Stock

Description and Introduction

Power Transistor (80V, 1A) The 2SD1863 is a silicon NPN epitaxial planar transistor manufactured by Toshiba. It is designed for use in high-speed switching and amplification applications. Key specifications include:

- **Collector-Base Voltage (VCBO):** 150 V
- **Collector-Emitter Voltage (VCEO):** 150 V
- **Emitter-Base Voltage (VEBO):** 5 V
- **Collector Current (IC):** 1.5 A
- **Collector Dissipation (PC):** 20 W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to 150°C
- **DC Current Gain (hFE):** 60 to 320
- **Transition Frequency (fT):** 80 MHz

The transistor is housed in a TO-220 package.

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