2SD1773 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max Unit*Collector-e ..
2SD1779 ,NPN SILICON TRANSISTORFEATURES
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
The 2SD1779 is high hFE transistor.
It is s ..
2SD1780 ,NPN SILICON TRANSISTORFEATURES 0 Built in 60 v Zener Diode at B-C. - . A.
. High DC Current Gain. 6? LEE
hFE = 800 to 3 ..
2SD1780 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 0C)
SYMBOL CHARACTERISTJC . . MAX. UNIT TEST CONDITIONS
Col ..
2SD1781 , NPN Silicon Plastic Encapsulated Transistor
2SD1781 , NPN Silicon Plastic Encapsulated Transistor
31251 , SOLISTRAND, Budget and DIAMOND GRIP
31270 , SOLISTRAND, Budget and DIAMOND GRIP
3-16-1J , Wideband RF Transformers
3-16-1J , Wideband RF Transformers
31DF1 ,Conductor Products, Inc. - Rectifiers Ultra-Fast Recovery
31DF2 , 3 Amp. Glass Passivated Ultrafast Recovery Rectifier
2SD1773
