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2SD1535 from PANASONIC, Panasonic 9595pcs,Power Device
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2SD1535 PANASONIC N/a 9595
Electrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max Unit*Collector-emitter sustaining voltage V I = 100 mA, R = ∞, L = 25 mH 400 VCEO(SUS) C BECollector-base cutoff current (Emitter open) I V = 500 V, I = 0 100 µACBO CB ECollector-emitter cutoff current (Base open) I V = 400 V, I = 0 100 µACEO CE BEmitter-base cutoff current (Collector open) I V = 12 V, I = 0 100 mAEBO EB CForward current transfer ratio h V = 2 V, I = 2 A 500 FE1 CE Ch V = 2 V, I = 6 A 200FE2 CE CCollector-emitter saturation voltage V I = 7 A, I = 70 mA 2.0 VCE(sat) C BBase-emitter saturation voltage V I = 7 A, I = 70 mA 2.5 VBE(sat) C BTransition frequency f V = 10 V, I = 0.5 A, f = 1 MHz 20 MHzT CE CCollector output capacitance C V = 10 V, I = 0, f = 1 MHz 70 pFob CB E (Common base, input open circuited)Turn-on time t I = 7 A, I = 70 mA, I = −70 mA, 1.5 µson C B1 B2Storage time t V = 300 V 5.0 µsstg CCFall time t 6.5 µsfNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.50 Hz/60 Hz2. :V Test circuit X*CEO(SUS)mercury relayLY120 Ω1 Ω6 V15 VGPublication date:March 2003 SJD00203BED 114.0±0.5 16.7±0.3Solder Dip(4.0) 7.5±0.2 0.7±0.14.2±0.22SD1535P  T I  V V  IC a C CE CE(sat) C100 10100I /I =100C B(1)TC=Ta T =25˚CC(2)With a 100×100×2mmAl heat sink80 (3)With a 50×50×2mm8 I =20mABAl heat sink10(4)Without heat sinkTC=100˚C(PC=2.0W)10mA60 25˚C6(1)15mA–25˚C4043mA0.120 22mA(3)(2)(4)1mA0 0 0.010 25 50 75 100 125 15006 15 24 3 0.01 0.1 1 10Ambient temperature T (°C) Collector-emitter voltage V (V)Collector current I (A)a CECV  I h  I t , t , t  IBE(sat) C FE C on stg f C5100 10010I /I =100 V =2VC B CE Pulsed tw=1msDuty cycle=1%I /I =100C B(IB1=–IB2)V =300VCC410 10 10TC=25˚CtstgTC=–25˚C31 10 1100˚C25˚CTC=100˚Ctf20.1 10 0.125˚C–25˚C ton0.01 10 0.010.01 0.1 1 10 0.01 0.1 1 1008 26 4Collector current I (A) Collector current I (A)Collector current I (A)C CCSafe operation area R  tth210100Non repetitive pulse (1)Without heat sinkTC=25˚C (2)With a 100×100×2mm Al heat sink (1)ICP10 t=0.1ms 10IC (2)t=1msDC11−1100.1−20.01 10−3 −2 −1 2 3 41 10 100 1 000 10 10 10 1 10 10 10 10Time t (s)Collector-emitter voltage V (V)CE2 SJD00203BEDCollector current I (A) Base-emitter saturation voltage V (V)Collector power dissipation P (W)C BE(sat)CThermal resistance R (°C/W)th Forward current transfer ratio h Collector current I (A)FE CCollector-emitter saturation voltage V (V)Turn-on time t , Storage time t , Fall time t (µs)CE(sat)on stg fand material(1) if any of the products or technologies described in this material and controlled under the "ForeignExchange and Foreign Trade Law" .(2) The technical information described in this material is limited to showing representative characteris-tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-tual property right or any other rights owned by our .(3) the use of theproduct or technologies as described in this material.(4)
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