2SD1407A. ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONSapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SD1407A-Y , Power Amplifier Applications
2SD1408 ,SILICON NPN TRIPLE DIFFUSED TYPEAPPLICATIONS._. High Power Dissipation , Pc=25W’(Tc=25°G)' Saguration VoltageUnit in mm
2SD1409 ,Silicon NPN Power Transistors TO-220Fa package
2SD1409A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONSAPPLICATIONS Unit 1n mm_1010.3 ' (#32102 2,7ur0.2TThrh DC Current Gain . hum = 600 (Min)vv- - v--v- ..
2SD1410 ,6A; 25W; V(ceo): 250V; NPN darlington transistor
305UR160 ,Standard recovery diodeapplicationsMajor Ratings and Characteristics301U(R)Parameters Units80 to 200 250I 330 300 AF(AV)@ ..
30700-1080 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 8 Circuits, Polarization Option 1Gray
30700-1120 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 12 Circuits, Polarization OptioGrayn
30A ,SCHOTTKY RECTIFIERFeaturesThe 22GQ100 Schottky rectifier has been expresslydesigned to meet the rigorous requirements ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --30 ..
2SD1407A-2SD1407A.
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS
TOSHIBA 2SD1407A
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SlD1407A
POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS
Unit in mm
q High Breakdown Voltage : VCE0=100V 2.7102
0 Low Collector Saturation Voltage : VCE (sat)=2-0V (Max.)
0 Complementary to 2SB1016A
MAXIMUM RATINGS (Tc-- 25°C) m
CHARACTERISTIC SYMBOL RATING UNIT i',
Collector-Base Voltage VCBO 100 V 0.75h0.15 _-
Collector-Emitter Voltage VCEO 100 V 2.5”025 2.54AO.25
Emitter-Base Voltage VEBO 5 V m 1 2 3 Q
Collector Current 10 5 A g; ='l 3
Base Current IB 0.5 A i-ir-fer-li',':
Collector Power Dissipation
(Tc=25°C) PC 30 W 1. BASE
. 0 2. COLLECTOR
Junction Temperature Ti 150 C 3. EMITTER
Storage Temperature Range Tstg -55--150 C JEDE C -
JEITA -
TOSHIBA 2-10R1A
Weight : 1.7 g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 100V, IE = 0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 1 mA
Collector-Emitter Breakdown - -
Voltage V (BR) CEO IC - 50mA, IB - 0 100 - - V
hFE (1) - -
DC Current Gain (Note) VCE - 5V, 10 - IA 40 - 240
hFE (2) VCE = 5V, 10 = 4A 20 - -
Collector-Emitter Saturation - -
Vol tage VCE (sat) 1C - 4A, IB - 0.4A - - 2.0 V
Base-Emitter Saturation - -
Vol tage VBE VCE - 5V, IC - IA - - 1.5 V
Transition Frequency fT VCE = 5V, IC = IA - 12 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 100 - pF
(Note) hFE(1) Classification R : 40--80, 0 : 70-140, Y : 120--240
1 2001-11-05
TOSHIBA 2SD1407A
IC - VCE IC - VBE
Ci, fi,
“5 I _ r:
B B--20mA 8
3 COMMON EMITTER j
C) = o 0
o Tc 25 C 0 COMMON EMITTER
VCE=5V
0 1 2 3 4 5 6 0 0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
hFE - IC g VCE (sat) - IC
500 a 2
E 300 it'jit 1 COMMON EMITTER
= ie A IC/IB=10
z Tc=75°C g g
2 m g 0.5
c: 100 La 8
E 25 ty 0.3 Te=75''C
'i! 50 -25 Egg
:3 30 g E 0 1
D - A .
8 COMMON EMITTER BS
VCE=5V 3 0.05
Ill 01 0 03 0 1 0 3 1 3 5 o 0 03
. . . . D . 0.01 0.03 0.1 0.3 1 3 5
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
l l l I l Ill l
IC MAX. (PULSED) X
10_ I I I I I I ll h
PC - Ta .4 :10 MAX. l l l .
s -(C0NTINU0US) I Irnskt.
Tc=Ta 5 A l L ' , .
g INFINITE HEAT SINK S? \ y.N, l 10ms>.<
E: F 3 ls . _ 100ms).k.
g, a \ \ "
H ttt -DC OPERATION N, 1
a a: . l
E D Tc=25 C N
tyfit" U) 1 y
M V n: N h
t O Fe _ h
DA- 21 N
td .1 0.5 . k
o g >.< SINGLE A
S o 0 3 NONREPETITIVE l
E . PULSE Tc=25°C N
.1 CURVES MUST BE
8 DERATED LINEARLY WITH
INCREASE IN
0.1 TEMPERATURE. VCEO MAX.
0 25 50 75 100 125 150 . 3 10 30 100 300
AMBIENT TEMPERATURE Ta (°C) COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-11-05
TOSHIBA 2SD1407A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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