2SD1140 ,Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
2SD1145 ,NPN Epitaxial Planar Silicon Transistor High-Current Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
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2SD1160 ,Transistor Silicon NPN Epitaxial Type (PCT process) Switching Applications Suitable for Motor Drive Applications
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30546 , TRANSFORMER
30546 , TRANSFORMER
30546.. , TRANSFORMER
2SD1140
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
2SD1140 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1140 Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Equivalent Circuit Unit: mm
Weight: 0.36 g (typ.)
BASE
EMITTER
COLLECTOR
