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2SC5592PANASONICN/a6600avaiSmall-signal device


2SC5592 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5594 , Silicon NPN Epitaxial High Frequency Low Noise Amplifier
2SC5594 , Silicon NPN Epitaxial High Frequency Low Noise Amplifier
2SC5606 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE ?HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE ..
2SC5606-T1 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE ?HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE ..
2SC5609 ,Silicon PNP epitaxial planer typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 60 VCBOC ..
2SK949MR ,N-CHANNEL SILICON POWER MOSFET1ilS_lKfi9::.jWt FUJI POWER MOS-FET N-IIHANNEL SILICON POWER MOS-FET I :eatures F-I SER ..
2SK954 , N-CHANNEL SILICON POWER MOS-FET
2SK962 ,N-Channel Silicon Power MOS-FETFeatures IOutIine Drawings q High speed switching - ___-,;,,,,-'" OLow on-resistance $32“ - 4.5 ..
2SK971 , Silicon N-Channel MOS FET
2SK971 , Silicon N-Channel MOS FET
2SK973 , Silicon N-Channel MOS FET


2SC5592

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