2SC5552 ,Power DeviceAbsolute Maximum Ratings T = 25°CC5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SC5552 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5555ZD-TR-E , Silicon NPN Epitaxial VHF / UHF wide band amplifier
2SC5564 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5564 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsFeatures [2SA2011/2SC5564]4.5 · Adoption of MBIT processes.1.51.6 · Large current capacitance. · Lo ..
2SC5565 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK890 ,2SK890
2SK890 ,2SK890
2SK899 ,N-CHANNEL SILICON POWER MOS-FETFeatures
IHigh speed switching
. Low on-resistance
"lo secondary breakdown
OLow driving p ..
2SK901 ,N-CHANNEL SILICON POWER MOSFETFeatures
0High speed switching
. Low on-resistance
0N0 secondary breakdown
OLow driving p ..
2SK901 ,N-CHANNEL SILICON POWER MOSFET__2_SK901
IMax. Ratings and Characteristics
©Absolute Maximum Ratings(Tc=25°C)
A2-19
FUJI ..
2SK902 ,N-Channel Silicon Power MOS-FETZ‘ESKQOZ FUJI POWER MOS-FET
N-3HANNEL SILICON POWER MOS-FET
-----r---- F-I SERIES
I
2SC5552
