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2SC5436NECN/a41000avaiNPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION


2SC5436 ,NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONT NPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5436NPN EPITAXIAL SILICON TRANSISTORULTRA SUPE ..
2SC5436-T1 ,Reduced noise high frequency amplification transistorT NPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5436NPN EPITAXIAL SILICON TRANSISTORULTRA SUPE ..
2SC5437 ,NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONT SPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5437-T1 ,Reduced noise high frequency amplification transistorT SPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5440 ,Power DeviceAbsolute Maximum Ratings T = 25°CC5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SC5440 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SK725 ,N-CHANNEL SILICON POWER MOS-FETApplications 1 IGatg q Switching regulators ggggco . UPS - LL 0.5 t5 5.45 5.45 - I H oD ..
2SK725 ,N-CHANNEL SILICON POWER MOS-FETFeatures IOutline Drawings . High speed switching ©Low on-resistance w gye.i_e'a' 2tt.t . No s ..
2SK725 ,N-CHANNEL SILICON POWER MOS-FET'i,?SK725 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Illl
2SK727 ,N-Channel Silicon Power MOS-FETFeatures IOutIine Drawings q High speed switching , ON?"v 4.5*oe 0 Low on-resistance 15.5..“ / ..
2SK727. ,N-Channel Silicon Power MOS-FETApplications 2.2 159mg . Switching regulators 'ii2'l, . U PS 1.5 5.45 o DC-DC converters OGene ..
2SK727-01 ,N-Channel Silicon Power MOS-FET2SK727-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES M


2SC5436

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