2SC5404 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SC5406 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SC5408 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5408-T1 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5409 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT97PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5409NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5411 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SK699 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORFEATURES . 4 V Gate Drive - Logic level - " MAX. 2 8 M
q Low R Sl ) A t0.334 MAX.) (0110 Ith )
D ..
2SK700 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty
SYMBOL
Maximum Temperatures
Storage Temperature . . ..
2SK701 ,N-channel MOS feild effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITION ..
2SK703 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 EC)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS
..
2SK705 ,N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 ''ty
SYMBOL CHARACTERISTIC
Drain to Source On-State
TE ..
2SK711 ,Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier ApplicationsApplications High |Y |: |Y | = 25 mS (typ.) fs fs Low C : C = 7.5 pF (typ.) iss iss Maximum ..
2SC5404
Silicon NPN Power Transistors TO-3P(H)IS package
2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf = 0.15 µs (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Tc = 25°C)
ELECTRICAL CHARACTERISTICS (Tc = 25°C) hFE (1) 0.15 0.3
Unit: mm
Weight: 5.5 g (typ.)
