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2SC5369NECN/a3000avaiNPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION


2SC5369 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATIONFEATURES PACKAGE DIMENSION (in mm)• High fT2.1±0.114 GHz TYP.1.25±0.1• High gain2| S21e | = 14 dB ..
2SC5369-T1 ,Microwave noise reduced amplifier/high gain amplifierFEATURES PACKAGE DIMENSION (in mm)• High fT2.1±0.114 GHz TYP.1.25±0.1• High gain2| S21e | = 14 dB ..
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2SK655 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK656 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
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2SC5369

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