2SC5368 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS.APPLICATIONSHigh Speed: tr=0.5,us (Max.), tf=0.3,us (Max.)IT~_(\OA\f-1,-tt-y:--ijrlhr--t JHigh Coll ..
2SC5368 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS.APPLICATIONS Unit in mmHIGH VOLTAGE SWlTCHING
2SC5369 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATIONFEATURES PACKAGE DIMENSION (in mm)• High fT2.1±0.114 GHz TYP.1.25±0.1• High gain2| S21e | = 14 dB ..
2SC5369-T1 ,Microwave noise reduced amplifier/high gain amplifierFEATURES PACKAGE DIMENSION (in mm)• High fT2.1±0.114 GHz TYP.1.25±0.1• High gain2| S21e | = 14 dB ..
2SC5370 , Silicon NPN Epitaxial Planar Transistor(Emergency Lighting Inverter and General Purpose)
2SC5374 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifiers ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK619 , SILICON N-CHANNEL MOS FET
2SK620 ,Silicon N-Channel MOS FETAbsolute Maximum Ratings (Ta = 25°C)Parameter Symbol Ratings Unit0.1 to 0.3Drain to Source breakdow ..
2SK65 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit*Drain to Source ..
2SK655 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK656 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SK656 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SC5368
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS.
TOSHIBA 2SC5368
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC5368
SWITCHING REGULATOR APPLICATIONS Unit in mm
HIGH VOLTAGE SWITCHING APPLICATIONS 8.3MAX.
5.8 ¢3.1 10.1
DC-DC CONVERTER APPLICATIONS '2 5“:
>6. m' m
C)f?jfc . s: i
g C-''
0 High Speed : tr=0.5ps (Max.), tf=0.3ps (Max.) ?j-
(IC = 0.8A) 1.0MAX. L
0 High Collector Breakdown Voltage : VCE0=45OV (1):???” t
o High DC Current Gain : hFE=20(Min.) (1C=0.3A) 3
MAXIMUM RATINGS (Tc-- 25°C) 2.2h0.1 2.2*0.1
1 2 3 O .
CHARACTERISTIC SYMBOL RATING UNIT m - m "io i, - v -rri,i.
Collector-Base Voltage VCBO 650 V ce' ---- m
Collector-Emi; Voltage VCEO 450 V t l. EMITTER
Emitter-Base Voltage VEBO 7 V g Sg"""
DC I 2
Collector Current C A JEDEC -
Pulse ICP 4 JEITA
Base Current IB 0.5 A -
Collector Power Ta=25°C P 1.5 W TOSHIBA 2-8HIA
Dissipation Tc=25°C C 10 Weight : 0.82 g(Typ.)
Junction Temperature Tj 150 ''C
Storage Temperature Range Tstg -55--150 T
1 2001-11-05
TOSHIBA 2SC5368
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 520V, IE = 0 - - 20 PA
Emitter Cut-off Current IEBO VEB = 7V, 10 = O - - 10 PA
Collector-Base Breakdown
Vol tage V (BR) CBO IC - 1mA, IE - 0 650 - - V
Collector-Emi;
Breakdown Voltage V (BR) CEO IE - lOmA, 1B - 0 450 - - V
. hFE (1) VCE = 5V, IC = 1mA 13 - -
C Current Gain hFE (2) VCE = 5V, IC = 0.2A 20 - 65
Collector-Emitter Saturation
Voltage VCE (sat) IC=0.8A, IB=0.IA - - 1.0 V
Base-Emitter Saturation
Voltage VBE (sat) IC=0.8A, IB=0.IA - - 1.3 V
. . 20ps
Rise Time tr H - - 0.5
S itchi 1B1 L,
W1 c mg .
Time Storage Time tstg - - 2.0 ps
Fall Time tf IBI = 0.IA, IB2 = -0.2A - - 0.3
DUTY CYCLES 1%
TOSHIBA
COLLECTOR CURRENT 10 (A)
DC CURRENT GAIN hFE
BASE-EMIT’I‘ER SATURATION VOLTAGE
VBE(sat) (V)
1C - VCE
COMMON
EMITTER
Tc = 25''C
0 2 4 6 8 10
COLLECOR-EMITTER VOLTAGE VCE (V)
hFE - IC
Tc=100°C
COMMON
EMITTER
VCE = 5V
0.01 0.03 0.05 0.1 0.3 0.5 1 3
COLLECTOR CURRENT 1C (A)
VBE (sat) - IC
COMMON
EMITTER
IC / IB = 8
Tc = 1 00°C
0.03 0.05 0.1 0.3 0.5 1 2
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT 10 (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE vows“) (V)
10 (A)
COLLECTOR CURRENT
2SC5368
IC - VBE
COMMON EMITTER
VCE=5V
//////
1 T =100T
c //+25
o 0.5 1 1.5
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB =8
Tc = 100°C
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
10 'r',',llll'd 'r,'r'll fllllll
10 MAX. (PULSED) X i i H!!!
3 10 MAX. (CONTINUOUS‘Q\ ,'er,sy"'"
1 N, "s"NA 10ms X
100ms .F.f ,
0.3 I l tlllt' A
DC OPERATION , ,
Tc=25°C N W
0.1 H E lvrllllll h
I [l[llllll hh'
.y.C. SINGLE NONREPETITIVE xx \
0.03 PULSE Tc=25°C N A,
CURVES MUST BE _
0.01 DERATED LINEARLY
WITH INCREASE IN : _
TEMPERATURE. :VCEO MAX.
0.003 Illllll I I
0.1 0.3 1 3 10 30 100 300 1000
C0LLEcT0R-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC5368
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
:
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