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2SC5321SECN/a400avaiTransistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC5321FSCN/a50avaiTransistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications


2SC5321 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applicationsapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5321 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC5322 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5331 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _C)LOEi) Ln- TT- T wr 1. wr "eftf't wr . A _.nlgn voltage : VCBO = l ..
2SC5331 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS2SC5331HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5331 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _C)LOEi) Ln- TT- T wr 1. wr "eftf't wr . A _.nlgn voltage : VCBO = l ..
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2SC5321
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
TOSHIBA 2SC5321
TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
VHF--UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
0 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) 2110.1
0 High Gain : |S21e|2 = 10 dB (f = 2 GHz) 1.25:0.1
MAXIMUM RATINGS (Ta = 25°C) [.5 l 'it'
_ 53. 1 c,
CHARACTERISTIC SYMBOL RATING UNIT 3. f. o =
Collector-Base Voltage VCBO 8 V N = g ch: I 3
Collector-Emitter Voltage VCEO 5 V l
Emitter-Base Voltage VEBO 1.5 V m
Collector Current IC 10 mA g l if?
Base Current 1B 5 mA il. ti" I (f,.
Collector Power Dissipation PC 100 mW cr - -
Junction Temperature Tj 125 T f
Storage Temperature Range Tstg -55--125 'C Ct
MARKING l. BASE
3 2. EMITTER
Fl 3. COLLECTOR
M U JEDEC -
txt tad EIAJ SC-70
1 2 TOSHIBA 2-2E1A
MICROWAVE CHARACTERISTICS (Ta = 25°C) Weight : 0.006g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Transition Frequency fT VCE = 3 V, IC = 7 mA 9 - - GHz
. . $21e2(1) VCE = 3V, IC = 7mA, f-- 1 GHz 12.5 15.5 -
Insertion Gain S21e 2 (2) VCE = 3 V, IC = 7 mA, f = 2 GHz 7 10 - dB
. . NF(1) VCE = 3V, IC = 3mA, f= 1 GHz - 0.9 1.8
Noise Figure NF (2) VCE = 3 V, IC = 3 mA, f = 2 GHz - 1.4 2.2 dB
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 8V, IE = 0 - - 1 pA
Emitter Cut-off Current IEBO VEB = 1 V, 10 = 0 - - 1 PA
DC Current Gain hFE VCE = 3 V, IC = 7mA 50 - 250 V
Output Capacitance Cob VCB = 2.5V, IE = 0, - 0.4 - pF
Reverse Transfer Capacitance Cre f = 1 MHz (Note) - 0.3 0.7 pF
(Note) 2 Cre is measured by 3 terminal method with Capacitance bridge.
CAUTION
This device electrostatic sensitivity. Please handle with caution.
1 2001-05-31
TOSHIBA 2SC5321
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
2 2001-05-31
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