Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC5193-T1-T88 |
NEC|NEC |
N/a |
3000 |
|
|
2SC5194 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORT88DATA SHEETSILICON TRANSISTOR2SC5194MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR
2SC5195 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR88DATA SHEETSILICON TRANSISTOR2SC5195MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR
2SC5195 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR88DATA SHEETSILICON TRANSISTOR2SC5195MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR
2SC5195-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR88DATA SHEETSILICON TRANSISTOR2SC5195MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTOR
2SC5196 ,Silicon NPN Power Transistors TO-3P(I) packageELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 4.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SK405. ,Silicon N Channel MOS typeTOSHIBA FIELD EFFECT TRANSISTORSILICON N CHANNEL MOS TYPETOSHIBA (DISCRETE/OPTO)28005P l CA-CS,AUDI ..
2SK4065 ,N-Channel Power MOSFET, 75V, 100A, 6mOhm, TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 75 VDSS ..
2SK4066 ,N-Channel Power MOSFET, 60V, 100A, 4.7mOhm, TO-262-3L/TO-263-2LMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 60 VDSS ..