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2SC5174TOSHIBAN/a20000avaiTRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
2SC5174. |2SC5174TOSN/a479avaiTRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS


2SC5174 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5174. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
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2SC5180 ,NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS• Low current consumption and high gain(Units : mm) 2⎜S21e⎥ = 12 dB TYP. ..
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2SK3991 ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching TO-251 (MP-3) 2SK3991 characteristics, a ..
2SK3991-ZK ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3991SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3993 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3993SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3994 ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 250 ..


2SC5174-2SC5174.
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
POWER AMPLIFIER APPLICATIONS
2SC5174
Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS
1010.2 21.2
0 High Transition Frequency : fT=100MHz (Typ.) %
0 Complementary to 2SA1932 a
MAXIMUM RATINGS (Ta - 25°C) :21
- II+CQS fats
CHARACTERISTIC SYMBOL RATING UNIT 3
Collector-Base Voltage VCBO 230 V E
Collector-Emi; Voltage VCEO 230 V g J -
Emitter-Base Voltage VEBO 5 V 1 2 3 g 0.5 ti).lt
Collector Current 10 1 A ntn + mh- l. BASE
Base Current 1B 0.1 A 3 2. COLLECTOR
. . . 3. EMITTER
Collector Power Dissipation PC 1.8 W
J unction Temperature Tj 150 °C JEDEC -
Storage Temperature Range Tstg -5lr-150 "C JEITA -
TOSHIBA 2-10T1A
Weight : 1.5g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=23OV, IE=0 - - 1.0 pA
Emitter Cut-off Current IEBO VEB=5V, 10:0 - - 1.0 PA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC - lOmA, IB - 0 230 - - V
DC Current Gain hFE VCE =5V, IC = 100mA 100 - 320
Collector-Emitter Saturation - -
Voltage VCE (sat) IC - 500mA, IB - 50mA - - 1.5 V
Base-Emitter Voltage VBE VCE = 5V, IC = 500mA - - 1.0 V
Transition Frequency fT VCE = 10V, IC = 100mA - 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE =0, f = 1MHz - 20 - pF
TOSHIBA
2SC5174
COLLECTOR CURRENT 1C (A)
DC CURRENT GAIN hFE
TRANSITION FREQUENCY fT (MHz)
IC - VCE
COMMON EMITTER
Ta = 25°C
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
VCE = 5V
Ta-- 100°C
0.003 0.01 0.03 0.1 0.3 1 3
COLLECTOR CURRENT IC (A)
fT - IC
MM EMITTE
3 00 CO ON R
VCE = 10V
Ta=25°C
5 10 30 100 300 1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT 10 (A)
COLLECTOREMITTER SATURATION
VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT 10 (A)
IC - VBE
Ta= 100°C 25 -25
COMMON EMITTER
VCE = 5V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
IC / IB = 10
Ta = 100°C
0.003 0.01 0.03 0.1 0.3 1 3
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
IC MAX. (PULSED) .).k.
10 MAX. N N,
(CONTINUOUS) '
l / _ _ _ Irns.)k.
10ms)k. h k
0.5 N I A' \
, I p" l
0.3 100 .)K.
N ms NN N,
DC OPERATION it
0.1 -Ta--25t lil
0.05 N h
X SINGLE NONREPETITIVE N
PULSE Ta=25°C
CURVES MUST BE DERATED \
0.01 LINEARLY WITH INCREASE
IN TEMPERATURE.
VCEO MAX.
30 50 100
1 3 5 10 300 500
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC5174
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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