| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC5168-111-F |
MITSUBISHI |
N/a |
15210 |
 |
|
| 2SC5168-111-F |
ISAHAYAIEC |
N/a |
227 |
|
|
| 2SC5168-111-F |
IDC |
N/a |
16141 |
|
|
2SC5171 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 1.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SC5171. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High Transition Frequency : fT=200MHz (Typ.)O Complementary to 2 ..
2SC5172 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS li=tUsiiri-,,r-, 1;?Excellent Switching Times: tr=0.5,us (Max.), tf=0.3,us (Max.) at 1 ..
2SC5174 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5174. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SK3947 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3973G ,Silicon N-channel MOS FETAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit Marking Symbol: 5VDrain-source sur ..
2SK3979 , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
