2SC5095 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SC5095-O , VHF~UHF Band Low Noise Amplifier Applications
2SC5103 TL Q , High speed switching transistor (60V, 5A)
2SC5103 TL Q , High speed switching transistor (60V, 5A)
2SC5103 TLQ , High speed switching transistor (60V, 5A)
2SC5103TLQ , High speed switching transistor (60V, 5A)
2SK381 , 2SK381
2SK3811 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3811SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3812 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3812SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3813-Z ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3813SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3814 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3814SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3824 , N-Channel Silicon MOSFET General-Purpose Switching Device
2SC5095
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5095 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C) VCE � 6 V, IC � 3 mA, f � 2 GHz
Electrical Characteristics (Ta ��� � 25°C)
Note 1: hFE classification R: 50~100, O: 80~160
Unit: mm
Weight: 0.006 g (typ.)
