2SC5027 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS, COLOR TV HORIZONTAL DRIVER APPLICATIONS, COLOR TV CHROMA OUTPUT APPLICATIONS2SC5027TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)HIGH VOLTAGE SWITCHING AND ..
2SC5027 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS, COLOR TV HORIZONTAL DRIVER APPLICATIONS, COLOR TV CHROMA OUTPUT APPLICATIONSAPPLICATIONS i"r'=''z''1i='a?="i--s,irts--i--,f.) .A.0 High Voltage : VCEQ=3UUV0 Small Collector Ou ..
2SC5029 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS Unit 1n mmLow Saturation Voltage'' A '-Nt fnhM: v CE (sat) = U.0 v (max)0 High Collect ..
2SC5034 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)nC0.75– 0.1Parameter Symbol Ratings UnitCollector to base voltag ..
2SC5034 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Featuresnf 3.2– 0.1l High collector to emitter VCEOl High-speed switching––l Full-pack package with ..
2SC5039 , 2SC5039
2SK3662 ,Field Effect Transistor Silicon N Channel MOS Type (PI-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol MaxUnit Thermal resistance, channel to case R 3.57 ° ..
2SK3662 ,Field Effect Transistor Silicon N Channel MOS Type (PI-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive ApplicationsApplications Low drain-source ON resistance: R = 9.4 mΩ (typ.) DS (ON) High forward transf ..
2SK3663 , N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
2SK3664 ,N-Channel enhancement MOS FET for load swFEATURES • 2.5 V drive available 2 1• Low on-state resistance +0.10.2–0 RDS(on)1 = 0.57 Ω MAX. (VGS ..
2SK3667 ,MOSFET 2SK/2SJ SeriesThermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.7 ..
2SK3669 ,Field Effect Transistor Silicon N Channel MOS Type (PI-MOS VII) Switching Regulators, for Audio Amplifier and Motor Drive ApplicationsApplications Low drain-source ON resistance: R = 95 mΩ (typ.) DS (ON) High forward transfe ..
2SC5027
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS, COLOR TV HORIZONTAL DRIVER APPLICATIONS, COLOR TV CHROMA OUTPUT APPLICATIONS
TOSHIBA
2SC5027
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SC5027
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS
COLOR TV HORIZONTAL DRIVER APPLICATIONS
COLOR TV CHROMA OUTPUT APPLICATIONS
0 High Voltage
: VCEO = 300V
0 Small Collector Output Capacitance : Cob=3.0pF (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
Unit in mm
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 7 V
Collector Current IC 100 mA
Base Current IB 50 mA
Collector Power Dissipation PC 1.3 W
Junction Temperature Tj 150 "C
Storage Temperature Range Tstg -55--150 "C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
s'' . EMITTER
2. COLLECTOR
3. BASE
J EDEC -
J EITA -
TOSHIBA 2-8M1A
Weight : 0.55g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 240V, IE = O - - 1.0 pA
Emitter Cut-off Current IEBO VEB = 7V, 1C = 0 - - 1.0 PA
. hFE (1) VCE = 10V, IC =4mA 20 - -
DC Current Gain hFE (2) VCE = 10V, 10 = 20mA 30 - 200
Collector-Emi; Saturation
Vol tage VCE (sat) IC - 10mA, IB - lmA - - 1.0 V
Base-Emitter Saturation
Vol tage VBE (sat) IC - 10mA, IB - lmA - - 1.0 V
Transition Frequency fT VCE = 10V, IC = 20mA 50 70 - MHz
Collector Output Capacitance Cob VCB = 20V, IE = 0, f = 1MHz - 3.0 - pF
TOSHIBA 2SC5027
IC - VCE hFE - IC
COMMON EMITTER COMMON EMITTER
Ta=25°c E 3 VCE=10V
li a =
v E Ta= 100°C
J? ti 1 2
E E -25
ttt td
g 0.3 1 3 10 30 100
o COLLECTOR CURRENT 10 (mA)
0 4 8 12 16 20 24
COLLECT0R-EMITTER VOLTAGE VCE (V) VCE (sat) - IC
COMMON EMITTER
hFE - IC a
2 IC/IB=5
COMMON EMITTER bis:
m Ta=25''C a A
' < "ts
= CD m
E v 20V 5, 8
< 1 CE-- > 0
[:1 ttd <
td o S
at a 0 Ta-- 100°C
Q d 0.1
0.3 1 3 10 30 100 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
VCE (sat) - IC
COMMON EMITTER
a V - I
o Ta=25°C m BE (sat) C
g a ts COMMON EMITTER
ti fi S IC/IB=5
w 32 2A - o
i.',, 8 2> Ta=25 C
ty' g a
E m :3 C4
La © E" M
”kg g 1:: 0
g " IC / IB = 10 m >
0‘; ll g 0.3
8 2 ii
. a 0.1
0.3 1 3 IO 30 100 g 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT 10 (mA)
2 2001-11-05
TOSHIBA
COLLECTOR CURRENT 10 (mA)
COLLECTOR OUTPUT CAPACITANCE
Cob (PF)
COLLECTOR
EMITTER
VCE = 10V f
Ta-- 100°C 25/; -25
0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE VBE (V)
Cob - VCB
3 10 30 100
COLLECTOR-BASE VOLTAGE VCB (V)
TRANSITION FREQUENCY fT
COLLECTOR CURRENT 10 (A)
2SC5027
COLLECTOR EMITTER
Ta = 25°C
VCE =20V
0.3 1 3 10 30 100
COLLECTOR CURRENT 10 (mA)
SAFE OPERATING AREA
IC MAX. (PULSED) X
IC MAX. (CONTINUOUS)
30 DC OPERATION
Ta = 25°C
X SINGLE NONREPETITIVE
PULSE Ta=25°C
1 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
VCEO MAX.
IN TEMPERATURE.
3 10 30 100 300 500
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC5027
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA.
500 (SINGLE NONREPETITIVE PULSE) Ta=25°c
TRANSIENT THERMAL RESISTANCE
rth (°C/W)
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
COLLECTOR POWER DISSIPATION
PC (W)
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
4 2001-11-05
TOSHIBA 2SC5027
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
:
www.loq.com
.
