| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC3928 -T12-1R |
MITSUBISHI |
N/a |
1990 |
 |
|
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3929 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca2.0±0.2Parameter Symbol Rating Unit10˚2SC3929 V 35 VCollector-ba ..
2SC3929A ,Small-signal deviceFeatures• Low noise voltage NV• High forward current transfer ratio hFE1 2• S-Mini type package, al ..
2SK2126 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C5.08±0.4Parameter Symbol Ratings Unit1 237 Drain to Source brea ..
2SK2128 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C5.08±0.4Parameter Symbol Ratings Unit1 237 Drain to Source brea ..
2SK2129 ,Silicon N-Channel Power F-MOS FETFeaturesl Avalanche energy capacity guaranteed: EAS > 20mJunit: mml V = ±30V guaranteedGSSl High-sp ..
