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2SC3912SANYON/a16400avaiNPN Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance)
2SC3912 SANYO N/a502avaiNPN Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance)


2SC3912 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance)Ordering number:ENN2159BPNP/NPN Epitaxial Planar Silicon Transistors2SA1518/2SC3912Switching Applic ..
2SC3912 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3913 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3914 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3915 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3916 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK2111 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2111N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2S ..
2SK2112 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2112N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2S ..
2SK212 ,N-Channel Junction Silicon FET FM Tuner ApplicationsFeatures Package Dimensions · Ideal for FM tuners in low-voltage radios, car radios,unit:mmetc.2040 ..
2SK2123 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C 2.54±0.25.08±0.4Parameter Symbol Ratings Unit1 237 Drain to So ..
2SK2123 ,Silicon N-Channel Power F-MOS FETFeaturesl Avalanche energy capacity guaranteed: EAS > 100mJunit: mml V = ±30V guaranteedGSSl High-s ..
2SK2123. ,Silicon N-Channel Power F-MOS FETPower F-MOS FETs2SK2123Silicon N-Channel Power F-MOS FETn


2SC3912

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