Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SC3716 |
TOSHIBA|TOSHIBA |
N/a |
200 |
|
|
2SC3722 , EPITAXIAL PLANAR NPN SILICON TRANSISTOR
2SC3722K , EPITAXIAL PLANAR NPN SILICON TRANSISTOR
2SC3728 , High hFE=150 to 800. High collector dissipation Pc=500mW. Small package for mounting.
2SC3731 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC
Turn-on Time
Storage Time
Turn-o ..
2SC3732 ,NPN SILICON TRANSISTORFEATURES 0 High Frequency Current Gain.
. High Speed Switching.
0 Small Output Capacitance.
AB ..
2SK1796 ,MOS Field Effect Power TransistorFEATURES
0 Low On-state Resistance
RDS(on) E 1.2 Q (VGS = 10 V, ID = 5 A)
0 Low Ciss Ciss = 2 ..
2SK1796 ,MOS Field Effect Power Transistorapplications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Drain to Source Voltage Voss 900 V l. Gat ..
2SK1807 , Silicon N-Channel MOS FET