2SC3709 ,NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)APPLICATIONSUnit in mm11wr 1:nATT I'nlrLOW UOHBCEOI' 25aturat10n V Oltage 2 V CE (sat) = U.4 V UVla ..
2SC3709A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.APPLICATIONS Unit in mmLow Collector Saturation VoltageHigh Speed Switching TimeComplementary to 2S ..
2SC3709A-Y , High-Current Switching Applications
2SC3709A-Y , High-Current Switching Applications
2SC3710A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.2SC3710ATOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mm11wr 1:nATT I'nlr. LOW ..
2SC3710A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.2SC3710ATOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mm11wr 1:nATT I'nlr. LOW ..
2SK1771 ,Field Effect Transistor Silicon N-Channel MOS Type FM Tuner, VHF RF Amplifier ApplicationsApplications Unit: mm Superior inter modulation performance. Low noise figure: NF = 1.0dB ( ..
2SK1772 , Silicon N-Channel MOS FET
2SK1792 ,Discrete SemiconductorsThermal CharacteristicsCHARACTERISTIG SYMBOL I MAX. UNITThermal Resistance, Channel lo Case B(clw.) ..
2SK1792 ,Discrete SemiconductorsAbsolute Maximum Ratings (Ta = MC) 3. SOURCECHARACTERISTICDrain-Source VoltageDrain-Gate Voltage (h ..
2SK1792 ,Discrete SemiconductorsFeaturesq 4-Volt Gate Drive. Low Drain-Source ON Resistance- RDS(ON) = 15mg fryp.)- High Forward Tr ..
2SK1796 ,MOS Field Effect Power TransistorFEATURES
0 Low On-state Resistance
RDS(on) E 1.2 Q (VGS = 10 V, ID = 5 A)
0 Low Ciss Ciss = 2 ..
2SC3709
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)
TOSHIBA
2SC3709A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3709A
HIGH CURRENT SWITCHING APPLICATIONS
q Low Collector Saturation Voltage
0 High Speed Switching Time
0 Complementary to 2SA1451A
MAXIMUM RATINGS (Ta = 25"C)
: VCE (sat)=0-4V (Max.)
: tstg=1-0#S (Typ.)
INDUSTRIAL APPLICATIONS
Unit in mm
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 6 V
Collector Current 10 12 A
Base Current IB 2 A
Collector Power Dissipation
(Tc=25°C) PC 30 W
Junction Temperature Tj 150 ''0
Storage Temperature Range Tstg -55--150 "C
0.75:0.15
2.54:0.25 2.54i025
in 'tl
'- _N N
‘3._!'l-H _ C5
2 1 2 3 _:[3{
l. BASE
2. COLLECTOR
3. EMITTER
JEDEC -
EIAJ -
TOSHIBA 2-10R1A
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1997-12-26 1/4
TOSHIBA 2SC3709A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current 1030 VCB = 60V, IE = 0 - - 10 PA
Emitter Cut-off Current IEBO VEB = 6V, IC = 0 - - 10 PA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC - 50mA, IB - O 50 - - V
hFE (1)
V =1V, I =1A 70 - 240
DC Current Gain (Note) CE C
hFE (2) VCE = IV, IC = 6A 40 - -
Collector-Emitter Saturation
I =6A, I =0.3A - . .
Base-Emitter Saturation
Vol tage VBE (sat) IC - 6A, IB - 0.3A - 0.9 1.2 V
Transition Frequency fT VCE = 5V, IC = IA - 90 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 180 - pl?
Turn-on Time ton 20ps 11310UTPUT - 0.2 -
I H INPUT Fsrr ct
Switching . B1 ni' IB2 UO
Time Storage Time tstg IB2 - 1.0 - pas
V '=.30V
. 1B1 = -IB2=0.3A, CC
Fall Time tf DUTY CYCLES 1% - 0.2 -
(Note) hFE(1) Classification o : 70--140, Y .' 120--240
1997-12-26 2/4
TOSHIBA 2SC3709A
IC - VCE A VCE - IC
COMMON V COMMON EMITTER
2 EMITTER 8 Te--25T
Tc=25°C
S? 1:1 40 60 8O 1
tl 5.:
0 2 4 6 8 10 12 14 8
0 2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
A VCE - IC A VCE - IC
' a 1.0
COMMON EMITTER
Tc = 100°C
COMMON EMITTER
IB=20mA Tc= -55''C
80 100 150 200
40 60 80 00 150 200
COLLECTOR-EMI’I‘TER VOLTAGE VCE
COLLECTOR-EMI’I'I‘ER VOLTAGE VCE
0 2 4 6 8 10 12 0 2 4 6 8 10 12
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT 10 (A)
hFE - IC VCE(sat) - IC
COMMON EMITTER
COMMON EMITTER
V - IV ti IC/IB=20
5. CE - M tt, 0.5
= Tc= 100"C) 2
z < ii' 0.3
E 25 w 49
c; ' g 8 Tc-- -55T
g' - 55 ty
M E a 0.1
f, :22
o t o 0.05
o 0.02
0.1 0.3 1 3 10 20 0.1 0.3 1 3 10 20
COLLECTOR CURRENT 10 (A) COLLECTOR CURRENT IC (A)
1997-12-26 3/4
TOSHIBA
2SC3709A
VBE (sat) - IC
COMMON EMITTER
1C / IB = 20
Tc = - 55°C
BASE-EMITTER SATURATION
VOLTAGE VBE (sat)
IL 0.3 1 3 10 20
COLLECTOR CURRENT 10 (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA
(SINGLE NONREPETITIVE PULSE)
C) INFINITE HEAT SINK
Q) NO HEAT SINK
(°C/W)
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (S)
SAFE OPERATING AREA
30 I I I IIIIII
10 MAX. (PULSED) My
10 IC MAX. ', h ms).k.
(CONTI- , L N 1
NUOUS) k , I
10msyi.
Is (A)
3 - DC OPERATIO .
Te = 25°C
COLLECTOR CURRENT
.yif SINGLE NONREPETITIVE
0.3 PULSE Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE VCEO MAX.
1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
COLLECTOR DISSIPATION PC (W)
IC - VBE
COMMON EMITTER
VCE=1V
Tc = 100°C
0.4 0.8 1.2 1.6 2.0 2.4
BASE-EMITTER VOLTAGE VBE (V)
T Tc=Ta
INFINITE HEAT SINK
© NO HEAT SINK
40 80 120 160 200 240
AMBIENT TEMPERATURE Ta (°C)
1997-12-26 4/4
www.ic-phoenix.com
.
