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2SC3645S-TD-E SANYO|SANYO N/a 1000



2SC3646 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647T-TD-E , Bipolar Transistor
2SC3649 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK165 ,Si N-channel junction. Wide-band, low-noise amplifier.Electrical Characteristics (Ta = 25 "C)Item Symbol Condition min. typ. max. UnitF V 4 V ttitr, Irss ..
2SK1657 ,N-CHANNEL MOS FET FOR SWITCHING2.9i0.2 1.1 to 1.4 Oto 0.1 . Source . Gate Drain G19 1 2 MARK: Gate(G) N-C ..
2SK1657-T1B ,MOS field effect transistor2.9i0.2 1.1 to 1.4 Oto 0.1 . Source . Gate Drain G19 1 2 MARK: Gate(G) N-C ..
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