2SC3644 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCollector-to-Base Voltage V0130 1200 - VCollector-to-Emitt ..
2SC3646 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647T-TD-E , Bipolar Transistor
2SC3649 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK165 ,Si N-channel junction. Wide-band, low-noise amplifier.Electrical Characteristics (Ta = 25 "C)Item Symbol Condition min. typ. max. UnitF V 4 V ttitr, Irss ..
2SK1657 ,N-CHANNEL MOS FET FOR SWITCHING2.9i0.2
1.1 to 1.4
Oto 0.1
. Source
. Gate
Drain
G19
1
2
MARK:
Gate(G)
N-C ..
2SK1657-T1B ,MOS field effect transistor2.9i0.2
1.1 to 1.4
Oto 0.1
. Source
. Gate
Drain
G19
1
2
MARK:
Gate(G)
N-C ..
2SK1657-T2B ,MOS field effect transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C)
PARAMETER
SYMBOL
2SK1657
TEST CON DlTl ONS
D ..
2SK1658 ,N-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 "C)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off Cu ..
2SK1663 ,N-CHANNEL SILICON POWER MOS-FETApplications --" j [ ' a _", (ole i we 'tr,
"Switching regulators J' em _ W ,
or, I an I' 5,08
..
2SC3644
